relation extraction of NLP

Answer "Yes" or "No" only. Does the following text contain a value of [Galvanostatic charge and discharge performances]?

Answer "Yes" or "No" only. Does the following text contain more than one value of [Galvanostatic charge and discharge performances]?

Give the number only without units, do not use a full sentence. If the
value is not present type "None".  What is the value of the
[Galvanostatic charge and discharge performances] in the following
text?

Give the number only without units, do not use a full sentence. If the
value is not present type "None".  What is the value of the
[Galvanostatic charge and discharge performances] (which include
charge and discharge value) in the following text?

Give the unit only, do not use a full sentence. If the unit is not present type "None". What is the value of the [Galvanostatic charge and discharge performances] in the following text?

# 多对多抽取
Use only data present in the text.  If data is not present in the
text, type "None". Summarize the value of the [Galvanostatic charge
and discharge performances] in the following text in a form of a table
consisting of: Cathode, Anode, Electrolytes,Cycles, Type, Value, Unit

Carbon-coated LiFeP04 (Hefei Kejing Materials Technology
Co.), UIO/Li-IL and Ketjen black powders were added to N-
methyl-2-pyrrolidone (NMP) subsequently in a weight ratio of
4 : 4 : 2 and stirred for 24 h to ensure homogeneous mixing. The
obtained slurry was coated on stainless steel current collectors,
and after solvent volatilization, the slurry was heated at 120 oc
in a vacuum for 6 h. The weights of the active material in the
electrodes were 1—2 mg. Solid-state lithium batteries were
assembled using these cathodes, PEO-n-UIO solid electrolytes
and a metallic Li anode in a Swagelok-type cell under a 10 N
pressure. The internal resistances of the batteries were
measured by AC impedance spectroscopy. Galvanostatic charge
and discharge performances of solid-state batteries were
investigated using a LANHE CT2001A charge/discharge system
(Wuhan LAND Electronics Co.) in the potential range from 2.8
to 4 V at 60 ℃.

The low resistance of the battery enables high performances,
as presented in Fig. 5b and c. In the first cycle, the specific
charge capacity of the battery is ~170 mA h g-1, while the
specific discharge capacity is ~151 mA h at a rate of 0.5C;
therefore, the coulombic efficiency is 89%. However, the
coulombic efficiency is greatly increased and remains at
in the following cycles. The specific discharge capacities of the
battery are 157, 152 and 144 mA h in the 10th, 50th and
100th cycles, respectively, and the specific discharge capacity of
the battery still remains at 95% after 100 cycles. The perfor-
mances of the solid-state battery are markedly improved by the
incorporation of nanostructured UIO/Li-IL fillers in PEO
(Fig. 5c). Compared with solid-state batteries reported in the
the performance of our battery is very compet-
itive. In ref. 15, the discharge capacity of the batteries with the
PEO-based composite polymer electrolytes was about 140 mA h
at 0.5C and 60 oc; in the work of Goodenough et al.,29 the
initial discharge capacity of the battery with the PEO-based
composite polymer electrolytes was 149 mA h g¯ , and it
decreased to 139 mA h after 100 cycles at 0.2C and 55 oc;
Zhang et al.2' achieved a high of 155 mA h
at 0.1C and 60 oc for the båttery-svrtæthe PEO-based
composite polymer electrolytes, but the capacity faded to 13%
in 10() cycles. The better performances of the solid-state lithium
battery in the present work could be attributed to the high
lithium ion conductivity and excellent stability against the
lithium electrode of solid polymer electrolytes, both of which
are due to the incorporation of the nanoporous multifunctional
UIO/Li-1L fillers.

For this task, you will be asked to annotate text with information about infrared devices and their performance characteristics. Before beginning the task, let us clarify the terms and context related to infrared technology.

Infrared devices, such as QWIP (Quantum Well Infrared Photodetectors), HgCdTe (Mercury Cadmium Telluride) detectors, and QDIP (Quantum Dot Infrared Photodetectors), are used to detect and measure infrared radiation. Infrared radiation is a type of electromagnetic radiation that lies beyond the visible spectrum and has applications in fields like night vision, thermography, and remote sensing.

Infrared device performance is often quantified using factors such as detectivity, responsivity, dark current. These performance metrics help determine the device's sensitivity, speed, and the range of wavelengths it can effectively detect.

Performance test conditions are crucial to understanding how well an infrared device functions under specific environmental conditions. Factors such as operating temperature, cutoff/peak wavelength, bias (voltage), temperature can influence device performance and are considered during testing.

When annotating, please focus on identifying relevant information about infrared devices (e.g., QWIP, HgCdTe, QDIP), their performance characteristics (e.g., detectivity, responsivity, dark current), and the conditions under which their performance is tested.

For the task of annotating infrared performance quantity, follow these instructions:

1. Carefully read the text, focusing on details related to infrared devices and their performance.

2. Identify the infrared performance/(test condition) quantity , its value and unit mentioned in the text

3. list the result as a table: device, quantity, value, unit, is_performance

4. if no value found in the text, ignore the row.

5. Use only data present in the text.


infrared text:
The relative spectral response (Fig. ) was measured at 77 K under front illumination conditions through the ptHgCdTe layer.;The spectral response is broad with a cut-off wavelength of 11.8 jim.;A quantum efficiency equal of 44% (without an antireflection coating) as measured under a reduced field of view (FOV) to cut down the background photon flux density using a thermocouple detector as the reference.;Diode is near background limited (BLIP) at 77 K exhibiting a detectivity ofD*(1800FOV,300 K,1O.5 tm) = 21O'°cmHz1/W.;The C-V curves for these diodes were routinely measured, from which the carrier concentration distribution in the active layer can be calculated.;The depletion width at zero bias was typically 0.3-0.4 jim and the junction appears to be graded.;The carrier concentration at zero bias was about 1015/cm3 and usually has been equal to that obtained from the Hall data.

The responsivity and noise were also measured with direct coupling to a low-noise preamplifier.;The values obtained lead to quantum efficiencies of around 50 percent, and detectivities of about 2 X 10" W-l * cm . Hz1/' at 77 K for a 180" field of view (FOV).;Because of the evolution of hybridization technology, it would seem reasonable to assume that diode resistances that are comparable with conventional resistances (RA = 5 52 * cm2 at 77 K) will be obtained in the near future.;This increase in resistance would permit obtaining detectivities higher than 5 X 10" W-' cm .;Hz'/'.;VII.;CONCLUSION High-performance multiplexing electronics (low noise, small pixel area) are essential for the fabrication of hybrid arrays of several thousand photovoltaic infrared detectors.;The tech-nology involved in hybridizing very large numbers of detectors onto silicon must also be mastered.;CCD's seem to be a very suitable way of assuring the electronic readout because of tl1ei.r low noise level and large dynamic range.;The best coupling technique seems to be by direct injection.

The injection efficiency then being better than 95 percent, the coupling noise would become negligible compared to the transfer noise (3630 charges).;The number of detector noise charges for an injection efficiency of close to 1 becomes N~~ = 5690.;The signal-to-noise ratio would then be degraded by a factor of 1.20 and the equivalent detectivity would be 5 x 1010 w-' cm .;H Z~'~.

For this task, you will be asked to annotate text with information about infrared devices and their performance characteristics. Before beginning the task, let us clarify the terms and context related to infrared technology.

Infrared devices, such as QWIP (Quantum Well Infrared Photodetectors), HgCdTe (Mercury Cadmium Telluride) detectors, and QDIP (Quantum Dot Infrared Photodetectors), are used to detect and measure infrared radiation. Infrared radiation is a type of electromagnetic radiation that lies beyond the visible spectrum and has applications in fields like night vision, thermography, and remote sensing.

Infrared device performance is often quantified using factors such as detectivity, responsivity, dark current. These performance metrics help determine the device's sensitivity, speed, and the range of wavelengths it can effectively detect.

Performance test conditions are crucial to understanding how well an infrared device functions under specific environmental conditions. Factors such as operating temperature, cutoff/peak wavelength, bias (voltage), temperature can influence device performance and are considered during testing.

When annotating, please focus on identifying relevant information about infrared devices (e.g., QWIP, HgCdTe, QDIP), their performance characteristics (e.g., detectivity, responsivity, dark current), and the conditions under which their performance is tested.

For the task of annotating infrared performance quantity, follow these instructions:

1. Carefully read the text, focusing on details related to infrared devices and their performance.

2. Identify the infrared performance/(test condition) quantity , its value and unit mentioned in the text

3. list the result as a table: device, quantity, value, unit, is_performance

4. if no value found in the text, ignore the row.

5. Use only data present in the text.

given text:
A number of 320x256 LWIR array with a wavelength longer than I0.0im has been successfully produced and operated.;The LWIR array was packaged in a dewar camera for testing.;An imaging picture taken by a LWIR array with a wavelength of l0.0tm at 77K is shown in Figure;. The facial features can be clearly identified.;The operability of this LWIR array is 97.1%.;Standard array testing has been conducted on the LWIR array using a Lumitron tester.;The distribution of array noise, responsivity, D*, and array uniformity have been measured at 77K and the results are shown in Figure;. With a 60° field of view cold shield and without anti-reflection coating, the median array D* is 9.4x10'°c m.;(Hz)"2.W'.;With an anti-reflection coating, the D* value can be improved by 40%.;HgCdTe Wafer 3 1629, with a wavelength of 14.7tm, was processed for producing 320x256 arrays using the PI3H process.;The diode I-V curve measured in dark and under thermal background on test diode with a size of 4x104 cm2 are shown respectively, in Figure ;(a) and;(b).;At 77K, the diode RoA is 2-3 Qcm2.;From lower temperature diode I-V curves, the diode RoAs at 53K and 48K are 20 cm2 and 1x104 cm2 respectively.;The 77K spectral response is shown in Figure .;During the hybridization of Array 3 1629-1, the weight for the indium bump bonding was reduced from our standard load in order to avoid damaging the diodes.;The setback was that some of the diodes near the edge were not properly connected.;Otherwise, the array functions very well.;Figure  shows the histogram of uniformity of array dark current.;The narrow distribution on the left indicates the unconnected and the poorly connected diodes.;The major peak in the center of the diagram illustrates the distribution of the connected diodes at a bias of less than 10 mV.;Figure  presents the quadruple output of leakage current signal after various integration times.;The blue curves portay the standard deviations of the signal.;Other than the poorly connected diodes at the edge of the array, the leakage current uniformity is quite good.;Even with the limitation of the charge capacitor for the 14.7im array, imaging picture of soldering iron can still be observed.;Currently, we are in the process of testing the array at temperatures lower than 77K.;A number of 128x128 arrays recently delivered to Lockheed Martin were fully characterized.;All of the arrays hybridized using the standard weight of 7kg have a minimum operability of 96% with a typical value of 97-98%.;In this section the characteristics oftwo arrays at the opposite LWIR wavelength spectrum are reported.

Background limited infrared photodetector (BLIP) performance, attained at cryogenic temperatures, is the maximum performance achievable by a photoconductive detector.;By increasing the operating temperature, low cost detectors can be realised using thermoelectric caoling (>200 K).;Investigation of temperature dependent performance of Hgl,Cd,Te infrared detectors is essential for developing device structures and fabrication technologies capable of producing BLIP performance.;In this paper the performance of n-type x = 0.31 Hgl.;,Cd,Te photoconductors under reduced cooling is examined experimentally and theoretically.;Measurements gave a background limited DA' of 1.9 x loir cm HzlnW-' up to 170 K and values of 7.3 x 10'' and 6.4 x lo9 cm Hz'nW'' were measured at 200 K and 300 K, respectively.

The dark current is given in figure .;The simulation shows the I -V characteristics at 70 K, 78 K and 100 K. The bandgap of Hg 1-x Cd x Te increases with temperature, and we can notice that effect of tunneling is far more prominent at lower temperatures.;At lower voltages (near zero), Auger generation is the primary cause of all the leakage current, this however changes with the application of higher voltages where tunneling becomes dominant.;We have also added the effect of ionized dopants, which would ideally lead to carrier freezeout at lower temperatures, but as the donor levels tend to lie deep inside the conduction/valence band, complete ionization is observed even at 77 K. We notice from the above graph the high resistance at low temperatures due to very low dark currents, but at 100 K we notice that the peak dynamic resistance drops to around 10 9 Ω from 10 11 Ω at 70 K. The noise levels in the device continue to increase as with the increase of temperature and voltage.;The increase in temperature leads to higher Auger generation; there are also noticeable contributions of shot noise and Johnson noise.;Figure  shows the Detectivity (jones) at 77K and 100K.;We notice that the Detectivity is an order of magnitude higher at 78K.;As the temperature increases the components contributing to noise like Auger generation deteriorate the detectors performance by increasing the leakage current and the detector ceases to provide background limited performance.;Thus it is imperative to operate HgCdTe photodetectors at low temperatures.